FDMS1D2N03DSD Dual N-Channel MOSFETs
Q1: N-Channel
• Max RDS(on) = 3.25 mW at VGS = 10 V, ID = 19 A
• Max RDS(on) = 4 mW at VGS = 4.5 V, ID = 17 A
Q2: N-Channel
• Max RDS(on) = 0.97 mW at VGS = 1.
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• Communications
• General Purpose Point of Load
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